內容簡介
《國外電子與電氣工程技術叢書·模擬電路設計:分立與集成(英文版)》以半導體物理理論為基礎,注重闡述模擬電路技術和BiCMOS技術,注重物理概念的詮釋,強調模擬電路的分離和和集成設計。全書主要內容有:PN結二極管、雙極結型晶體管、MOS場效應晶體管、模擬集成電路構建、模擬集成電路、頻率和時間響應、反饋、穩定性和噪聲。
作者簡介
Sergio France,齣生在意大利,1980年開始在美國舊金山州立大學電氣工程係授課,期間獲得瞭伊利諾伊大學香檳分校博士學位,成為該係榮譽教授。在就任現職之前。Franc0博士擁有廣泛的行業經驗,在諸如固態物理學、模式識彆、集成電路(IC)設計、醫學電子、日用電子和汽車電子等領域工作過,發錶論文頗豐,Franco博士還是《Design with OperationalAmplifiers and Analog Integrated Circuits》(McGraw—Hill Education,2014)和《ElectricCiruit Fundamentals》(Oxford University Press,1995)兩本教科書的作者。
內頁插圖
目錄
Preface
Chapter 1 Diodes and the pn Junction
1.1 The Ideal Diode
1.2 Basic Diode Applications
1.3 Operational Amplifiers and Diode Applications
1.4 Semiconductors
1.5 The pn Junction in Equilibrium
1.6 Effect of ExternaI Bias on the SCL Parameters
1.7 Thepn Diode Equation
1.8 The Reverse.Biased pn Junction
1.9 FOrward.Biased Diode Characteristics
1.10 Dc Analysis ofpn Diode Circuits
1.11 Ac Analysis ofpn Diode Circuits
1.12 Breakdown-Region Operation
1.13 Dc Power Supplies
Appendix 1A:SPICE Models for Diodes
References
Prohiems
Chapter 2 Bipolar Junction Transistors
2.1 Physical Structure of the BJT
2.2 Basic BJT Operation
2.3 The f.v Characteristics 0f BJTs
2.4 Operating Regions and BJT Models
2.5 The BJT as an Amplifier/Switch
2.6 Small.Signal Operation of the BJT
2.7 BJT Biasing for Amplifier Design
2.8 Basic Bipolar Voltage Amplifiers
2.9 Bipolar Voltage and Current Buffers
Appendix 2A:SPICE Models for BJTs
References
Problems
Chapter 3 MOS Field-E竹ect Transistors
3.1 Physical Structure of the MOSFET
3.2 The Threshold Voltage V
3.3 The n-Channel Characteristic
3.4 The i-v Characteristics of MOSFETs
3.5 MoSFETs in Resistive Dc Circuits
3.6 The MOSFET as an Amplifier/Switch
3.7 Small-Signal Operation of the MOSFET
3.8 Basic MOSFET VOItage Amplifiers
3.9 MOSFET Voltage and Current BufierS
3.10 The CMoS Inverter/Amplifier
Appendix 3A:SPICE Models for MOSFETS
References
Problems
Chapter 4 Building Blocks for Analog Integrated Circuits
4.1 Design Considerations in Monolithic Circuits
4.2 BJT CharacteristiCS and Models Revisited
4.3 MoSFET CharacteristiCS and Models Revisited
4.4 Darlington,Cascode,and Cascade Configurations
4.5 Differential Pairs
4.6 Common-Mode Rejection Ratio in Differential Pairs
4.7 Input Offset Voltage/Current in Differential Pairs
4.8 Current Mirrors
4.9 Differentiai Pairs with Active Loads
4.10 Bipolar Output Stages
4.11 CMOS Output Stages
Appendix 4A:Editing SPICE Netlists
References
Problems
Chapter 5 Analog Integrated Circuits
5.1 The btA741 Operational Amplifer
5.2 The Two-Stage CMOS Operational Amplifier
5.3 The F10lded.Cascode CMOS Operational Amplifier
5.4 Voltage Comparators
5.5 Current and Voltage References
5.6 Current-Mode Integrated Circuits
5.7 Fully Differential Operational Amplifiers
5.8 Switched.Capacitor Circuits
Appendix 5A:SPICE Macro—Models
References
Problems
Chapter 6 Frequency and Time Responses
6.1 High-Frequency BJT Model
6.2 High-Frequency MOSFET Model
6.3 Frequency Response of CE/CS Amplifiers
6.4 Frequency Response of Differential Amplifiers
6.5 Bipolar Voltage and Current Buffers
6.6 MOS Voltage and Current BUffers
6.7 Open-Circuit Time-Constant (OCTC) Analvsis
6.8 Frequency Response of Cascode Amplifiers
6.9 Frequency and Transient Responses of OpAmps 629
6.10 Diode Switching Transients 639
6.11 BJT Switching Transients 644
6.12 Transient Response of CMOS Gates and Voltage Comparators
Appendix 6A:Transfer Functions and Bode
Plots
References
Problems
Chapter 7 Feedback,Stability,and Noise
7.1 Negative-Feedback Basics
7.2 Effect of Feedback on Distortion-Noise,and Bandwidth
7.3 Feedback Topologies and Closed-Loop I/O Resistances
7.4 Practical Configurations and the Effect of Loading
7.5 Return Ratio Analysis
7.6 Blackman’S Impedance Formula and Injection Methods
7.7 Stability in Negative-Feedback Circuils
7.8 Dominant-Pole Compensation
7.9 Frequency Compensation of Monolithic Op Amps
7.10 Noise
References
Problems
Index
前言/序言
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