基本信息

書名：光電集成電路設計與器件建模(英文版)

定價：59.00元

作者：高建軍

齣版社：高等教育齣版社

齣版日期：2011-01-01

ISBN：9787040313260

字數：

頁碼：262

版次：1

裝幀：平裝

開本：16開

商品重量：0.740kg

編輯推薦

內容提要

《光電集成電路設計與器件建模（英文版）》主要介紹微波技術在光電子集成電路設計領域的應用，內容涵蓋先進的半導體光電子器件建模技術、高速光發射和接收電路設計技術，器件涉及半導體激光器、半導體探測器以及多種高速半導體器件，特彆是對於雙極晶體管和場效應晶體管在超高速光電子集成電路中的應用進行瞭詳細的討論。
n　　《光電集成電路設計與器件建模（英文版）》在微波器件建模技術和光電子集成電路設計之間架起瞭一座學科貫通的橋梁，非常適閤微波射頻領域和光電子領域的高年級本科生、研究生和科研工作人員入門學習。

目錄

Preface
nAbout the Author
n1 Nomenclature
nIntroduction
n1.1 Optical CommunicatioSystem
n1.2 Optoelectronic Integrated Circuit Computer-Aided Design
n1.3 Organizatioof This Book
nReferences
n2 Basic Concept of Semiconductor Laser Diodes
n2.1 Introduction
n2.2 Basic Concept
n2.2.1 Atom Energy
n2.2.2 Emissioand Absorption
n2.2.3 PopulatioInversion
n2.3 Structures and Types
n2.3.1 Homojunctioand Heterojunction
n2.3.2 Index Guiding and GaiGuiding
n2.3.3 Fabry-Perot Cavity Lasers
n2.3.4 Quantum-Well Lasers
n2.3.5 Distributed Feedback Lasers
n2.3.6 Vertical-Cavity Surface-Emitting Lasers
n2.4 Laser Characteristics
n2.4.1 Single-Mode Rate Equations
n2.4.2 Multimode Rate Equations
n2.4.3 Small-Signal Intensity Modulation
n2.4.4 Small-Signal Frequency Modulation
n2.4.5 Large-Signal Transit Response
n2.4.6 Second Harmonic Distortion
n2.4.7 Relative Intensity Noise
n2.4.8 Measurement Technique
n2.5 Summary
nReferences
n3 Modeling and Parameter ExtractioTechniques of Lasers
n3.1 Introduction
n3.2 Standard Double HeterojunctioSemiconductor Lasers
n3.2.1 Large-Signal Model
n3.2.2 Small-Signal Model
n3.2.3 Noise Model
n3.3 Quantum-Well Lasers
n3.3.1 One-Level Equivalent Circuit Model
n3.3.2 Two-Level Equivalent Circuit Model
n3.3.3 Three-Level Equivalent Circuit Model
n3.4 Parameter ExtractioMethods
n3.4.1 Direct-ExtractioMethod
n3.4.2 Semi-Analytical Method
n3.5 Summary
nReferences
n4 Microwave Modeling Techniques of Photodiodes
n4.1 Introduction
n4.2 Physical Principles
n4.3 Figures of Merit
n4.3.1 Responsivity
n4.3.2 Quantum Efficiency
n4.3.3 AbsorptioCoefficient
n4.3.4 Dark Current
n4.3.5 Rise Time and Bandwidth
n4.3.6 Noise Currents
n4.4 Microwave Modeling Techniques
n4.4.1 PIN PD
n4.4.2 APD
n4.5 Summary
nReferences
n5 High-Speed Electronic Semiconductor Devices
n5.1 Overview of Microwave Transistors
n5.2 FET Modeling Technique
n5.2.1 FET Small-Signal Modeling
n5.2.2 FET Large-Signal Modeling
n5.2.3 FET Noise Modeling
n5.3 GaAs/InP HBT Modeling Technique
n5.3.1 GaAs/InP HBT Nonlinear Model
n5.3.2 GaAs/InP HBT Linear Model
n5.3.3 GaAs/InP HBT Noise Model
n5.3.4 Parameter ExtractioMethods
n5.4 SiGe HBT Modeling Technique
n5.5 MOSFET Modeling Technique
n5.5.1 MOSFET Small-Signal Model
n5.5.2 MOSFET Noise Model
n5.5.3 Parameter ExtractioMethods
n5.6 Summary
nReferences
n6 Semiconductor Laser and Modulator Driver Circuit Design
n6.1 Basic Concepts
n6.1.1 NRZ and RZ Data
n6.1.2 Optical Modulation
n6.1.3 Optical External Modulator
n6.2 Optoelectronic IntegratioTechnology
n6.2.1 Monofithic Optoelectronic Integrated Circuits
n6.2.2 Hybrid Optoelectronic Integrated Circuits
n6.3 Laser Driver Circuit Design
n6.4 Modulator Driver Circuit Design
n6.4.1 FET-Based Driver Circuit
n6.4.2 Bipolar Transistor-Based Driver Integrated Circuit
n6.4.3 MOSFET-Based Driver Integrated Circuit
n6.5 Distributed Driver Circuit Design
n6.6 Passive Peaking Techniques
n6.6.1 Capacitive Peaking Techniques
n6.6.2 Inductive Peaking Techniques
n6.7 Summary
nReferences
n7 Optical Receiver Front-End, Integrated Circuit Design
n7.1 Basic Concepts of the Optical Receiver
n7.1.1 Signal-to-Noise Ratio
n7.1.2 Bit Error Ratio
n7.1.3 Sensitivity
n7.1.4 Eye Diagram
n7.1.5 Signal Bandwidth
n7.1.6 Dynamic Range
n7.2 Front-End Circuit Design
n7.2.1 Hybrid and Monolithic OEIC
n7.2.2 High-Impedance Front-End
n7.2.3 Transimpedance Front-End
n7.3 Transi-mpedance Gaiand Equivalent Input Noise Current
n7.3.1 S Parameters of a Two-Port Network
n7.3.2 Noise Figure of a Two-Port Network
n7.3.3 Transimpedance Gain
n7.3.4 Equivalent Input Noise Current
n7.3.5 Simulatioand Measurement of Transimpedance Gaiand Equivalent Input Noise Current
n7.4 Transimpedance Amplifier Circuit Design
n7.4.1 BJT-Based Circuit Design
n7.4.2 HBT-Based Circuit Design
n7.4.3 FET-Based Circuit Design
n7.4.4 MOSFET-Based Circuit Design
n7.4.5 Distributed Circuit Design
n7.5 Passive Peaking Techniques
n7.5.1 Inductive Peaking Techniques
n7.5.2 Capacitive Peaking Techniques
n7.6 Matching Techniques
n7.7 Summary
nReferences
nIndex

作者介紹

　　高建軍，華東師範大學教授，博士生導師，“紫江學者”特聘教授，中國科學院微電子研究所客座教授，中國電子學會高級會員，IEEE高級會員，2005年入選教育部“新世紀人纔支持計劃”。任多個國際微波學術刊物的編委和審稿人，齣版學術專著5部，發錶SCI論文40篇，EI論文40篇。

文摘

序言