基本信息

书名:微电子学导论(英文版)

定价：69.00元

售价：44.9元,便宜24.1元,折扣65

作者:赵策洲,方舟,陆骐峰

出版社：科学出版社

出版日期：2014-01-01

ISBN：9787030397751

字数：

页码：

版次：1

装帧：平装

开本：16开

商品重量：0.4kg

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内容提要

《微电子学导论（英文版）》讲述了半导体材料、半导体器件、微电子工艺及制造、以及IC设计等的基础和基本知识。《微电子学导论（英文版）》力图以比较浅显易懂的方式来介绍半导体物理和器件的基础知识，介绍了微电子制造的基本工艺知识和半导体器件，如IC电阻、二极管、MOSFETs和双极晶体管的工艺流程，也介绍了简单MOS数字集成电路和模拟集成电路的概论、电路分析和版图设计。

目录

PrefaceChapter 1 Introduction 1.1 History of semiconductor devices and ICs 1.2 Moore's Law--transistor scaling 1.3 Die yield and die cost ReferencesChapter 2 Semiconductor material fundamentals 2.1 Atomic structures 2.1.1 Elements and element periodic table 2.1.2 Bohr's theory--orbits 2.1.3 Distribution of electrons--valence electrons 2.1.4 Chemical bonds 2.2 Crystal structures 2.2.1 General material structures 2.2.2 Crystallography--diamond structure and zinc blende structure 2.2.3 Crystallographic notation 2.2.4 Bohr's theory--energy level and energy band 2.3 Energy band theory 2.3.1 Insulator, semiconductor and conductor 2.3.2 Electrons and holes 2.3.3 Generation and rebination 2.4 Doping of semiconductors 2.4.1 Doping elements 2.4.2 Doping: n-type 2.4.3 Doping: p-type 2.4.4 Counter doping 2.5 Carriers distribution 2.5.1 Fermi function and Fermi level 2.5.2 Density of states 2.5.3 Electron and hole concentrations 2.6 Carrier drift and diffusion 2.6.1 Carrier scattering 2.6.2 Carrier drift--drift currents and mobility 2.6.3 Electric field and energy band bending 2.6.4 Carrier diffusion--diffusion currents and Einstein relation ReferencesChapter 3 Semiconductor device fundamentals 3.1 PN junction 3.1.1 Formation of depletion region 3.1.2 Built-in potential 3.1.3 Distribution of electric field and electric potential 3.1.4 Effect of applied voltage 3.1.5 Depletion capacitance 3.2 Metal-semiconductor contacts and MOS capacitors 3.2.1 Schottky diode and Ohmic contact 3.2.2 MOS capacitance and measurement 3.2.3 MOS energy band diagram 3.2.4 Capacitance--voltage characteristics 3.3 MOSFETs 3.3.1 Current--voltage characteristics 3.3.2 Types and circuit symbols of MOSFETs 3.3.3 Switch model of MOSFETs 3.4 Bipolar junction transistors 3.4.1 PN junction--a brief review 3.4.2 BJT structure and circuit symbols 3.4.3 NPN BJT operation--a qualitative analysis 3.4.4 NPN BJT operation--a quantitative analysis ReferencesChapter 4 Semiconductor fabrication fundamentals 4.1 IC fabrication techniques 4.1.1 Thin film formation 4.1.2 Photolithography and etching 4.1.3 Doping 4.2 IC resistor and diode process 4.2.1 IC resistor--masks and process steps 4.2.2 Design rules 4.2.3 Sheet resistance 4.2.4 Layout design of an IC resistor 4.2.5 Diode--masks and process steps 4.3 MOSFET process 4.3.1 NMOSFET process flow and layout 4.3.2 Local oxidation of silicon 4.3.3 CMOS n well process flow 4.4 BJT process 4.4.1 BJT process steps 4.4.2 Layout of an NPN BJT IC ReferencesChapter 5 Integrated circuits--concepts and design 5.1 NMOS digital circuits 5.1.1 NMOS digital circuits analysis--logic and calculation 5.1.2 MOSIS design rules for NMOS ICs 5.1.3 Layouts of NMOS logic families 5.2 CMOS digital circuits 5.2.1 CMOS digital circuits analysis 5.2.2 MOSIS design rules for CMOS ICs 5.2.3 MOS transistors in series/parallel connection 5.2.4 CMOS inverter, NOR gates and NAND gates 5.2.5 Ratioed logic and binational equivalent circuit 5.2.6 Dynamic circuits 5.3 MOS analog circuits 5.3.1 MOSFET active resistors and potential dividers 5.3.2 MOSFET mon-source stages 5.3.3 CMOS push-pull amplifiers 5.3.4 MOSFET current mirrors 5.3.5 MOSFET differential amplifiers ReferencesAppendix I Properties of semiconductor materialsAppendix II Symbols and constantAppendix III L-Edit Quick Guide

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