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内容简介

　　《微电子学导论（英文版）》包括：半导体材料、半导体器件、微电子工艺及制造、以及IC设计等的基础和基本知识。《微电子学导论（英文版）》力图以比较浅显易懂的方式来介绍半导体物理和器件的基础知识，介绍了微电子制造的基本工艺知识和半导体器件，如IC电阻、二极管、MOSFETs和双极晶体管的工艺流程，也介绍了简单MOS数字集成电路和模拟集成电路的概论、电路分析和版图设计。

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目录

Preface
Chapter1Introduction
1.1HistoryofsemiconductordevicesandICs
1.2Moore'sLaw--transistorscaling
1.3Dieyieldanddiecost
References
Chapter2Semiconductormaterialfundamentals
2.1Atomicstructures
2.1.1Elementsandelementperiodictable
2.1.2Bohr'stheory--orbits
2.1.3Distributionofelectrons--valenceelectrons
2.1.4Chemicalbonds
2.2Crystalstructures
2.2.1Generalmaterialstructures
2.2.2Crystallography--diamondstructureandzincblendestructure
2.2.3Crystallographicnotation
2.2.4Bohr'stheory--energylevelandenergyband
2.3Energybandtheory
2.3.1Insulator,semiconductorandconductor
2.3.2Electronsandholes
2.3.3Generationandrecombination
2.4Dopingofsemiconductors
2.4.1Dopingelements
2.4.2Doping:n-type
2.4.3Doping:p-type
2.4.4Counterdoping
2.5Carriersdistribution
2.5.1FermifunctionandFermilevel
2.5.2Densityofstates
2.5.3Electronandholeconcentrations
2.6Carrierdriftanddiffusion
2.6.1Carrierscattering
2.6.2Carrierdrift--driftcurrentsandmobility
2.6.3Electricfieldandenergybandbending
2.6.4Carrierdiffusion--diffusioncurrentsandEinsteinrelation
References
Chapter3Semiconductordevicefundamentals
3.1PNjunction
3.1.1Formationofdepletionregion
3.1.2Built-inpotential
3.1.3Distributionofelectricfieldandelectricpotential
3.1.4Effectofappliedvoltage
3.1.5Depletioncapacitance
3.2Metal-semiconductorcontactsandMOScapacitors
3.2.1SchottkydiodeandOhmiccontact
3.2.2MOScapacitanceandmeasurement
3.2.3MOSenergybanddiagram
3.2.4Capacitance--voltagecharacteristics
3.3MOSFETs
3.3.1Current--voltagecharacteristics
3.3.2TypesandcircuitsymbolsofMOSFETs
3.3.3SwitchmodelofMOSFETs
3.4Bipolarjunctiontransistors
3.4.1PNjunction--abriefreview
3.4.2BJTstructureandcircuitsymbols
3.4.3NPNBJToperation--aqualitativeanalysis
3.4.4NPNBJToperation--aquantitativeanalysis
References
Chapter4Semiconductorfabricationfundamentals
4.1ICfabricationtechniques
4.1.1Thinfilmformation
4.1.2Photolithographyandetching
4.1.3Doping
4.2ICresistoranddiodeprocess
4.2.1ICresistor--masksandprocesssteps
4.2.2Designrules
4.2.3Sheetresistance
4.2.4LayoutdesignofanICresistor
4.2.5Diode--masksandprocesssteps
4.3MOSFETprocess
4.3.1NMOSFETprocessflowandlayout
4.3.2Localoxidationofsilicon
4.3.3CMOSnwellprocessflow
4.4BJTprocess
4.4.1BJTprocesssteps
4.4.2LayoutofanNPNBJTIC
References
Chapter5Integratedcircuits--conceptsanddesign
5.1NMOSdigitalcircuits
5.1.1NMOSdigitalcircuitsanalysis--logicandcalculation
5.1.2MOSISdesignrulesforNMOSICs
5.1.3LayoutsofNMOSlogicfamilies
5.2CMOSdigitalcircuits
5.2.1CMOSdigitalcircuitsanalysis
5.2.2MOSISdesignrulesforCMOSICs
5.2.3MOStransistorsinseries/parallelconnection
5.2.4CMOSinverter,NORgatesandNANDgates
5.2.5Ratioedlogicandcombinationalequivalentcircuit
5.2.6Dynamiccircuits
5.3MOSanalogcircuits
5.3.1MOSFETactiveresistorsandpotentialdividers
5.3.2MOSFETcommon-sourcestages
5.3.3CMOSpush-pullamplifiers
5.3.4MOSFETcurrentmirrors
5.3.5MOSFETdifferentialamplifiers
References
AppendixIPropertiesofsemiconductormaterials
AppendixIISymbolsandconstant
AppendixIIIL-EditQuickGuide

前言/序言

微电子学导论（英文版） [An Introduction to Microelectronics] 电子书 下载 mobi epub pdf txt

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