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內容簡介

　　This volume is one of a series originally issued under anotherimprint. The other volumes in this series are as follows：Characterization of Catalytic Materialsisrael E. Wachs；Characterization of Metals and AlloysPaul H. Holloway and P. N Vaidyanathan；Characterization of CeramicsRona/d E. Loehman；Characterization of PolymersNed J. Chou， Stephen R Kowalczyk， Ravi Saraf， and Ho—Ming Tong；Characterization in Compound Semiconductor ProcessingGary McGuire and Yale Strausser；Characterization of Integrated Circuit Packaging MaterialsThomas M. Moore and Robert G. McKenna；Characterization of Composite MaterialsHatsuo Ishida；Characterization of Tribological MaterialsWilliam A. Glaeser；Characterization of Optical MaterialsGregory J. Exarhos；Characterization of Organic Thin FilmsAbraham Ulman.

目錄

Preface to the Reissue of the Materials Characterization Series ix
Preface to Series x
Preface to the Reissue of Characterization in Silicon Processing xi
Preface xii
Contributors xiv
APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH
1.1 Introduction 1
1.2 Silicon Epitaxial Growth 2
Basic Chemical Reactions 2， Precleaning Considerations 3，
Reactor Types 3
1.3 Film and Process Characterization 4
Crystal Quality 4， PrecleanQuality 6， Thickness 9， Dopant
Concentration and Dopant Profiling 12
1.4 Selective Growth 14
Basic Process Considerations 14， Defect Density and Growth
Morphology 15， Predean Quality 18， Thickness 18
1.5 Si1 _xGex Epitaxial Growth 18
Material Considerations 18， Reactor Types 19
1.6 Si1_ xGex Material Characterization 20
Composition and Thickness 20， Growth Morphology 22， Lattice
Strain and Critical Thickness 23， Relaxation Kinetics 24， Bandgap
Measurements 24， Interracial Abruptness and Outdiffusion 25，
Impurity Profiles 25
1.7 Summary 26
POLYSILICON CONDUCTORS
SILICIDES
ALUMINUM— AND COPPER—BASED CONDUCTORS
TUNGSTEN—BASED CONDUCTORS
BARRIER FILMS
APPENDIX： TECHNIQUE SUMMARIES

前言/序言

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